| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a trench gate structure capable of preventing reduction in dielectric strength of a gate oxide film and oscillation of withstand-voltage by improving the layout shape of a trench end portion. <P>SOLUTION: A semiconductor device of the present invention comprises a trench 5 that extends from a surface of a P-base layer 4 to a surface of a P-well layer 3 and has a trench end portion 8, that is a termination structure in the extend direction, in the surface of the P-well layer 3. The trench 5 has a first region extending from the trench end portion 8 to the surface of the P-base layer 4 adjacent to a boundary between the P-base layer 4 and the P-well layer 3, and a second region extending from an end portion of the first region in the surface of the P-base layer 4. The trench width in the first region is wider than that in the second region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
