发明名称 Memory Device
摘要 A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first and the second electrodes. Furthermore, an oxidation-reduction active material changeable into an electrode reaction inhibition layer by applying voltages to the first and the second electrodes is contained in a region that is covered by an electric field, the electric field being generated when the voltage is applied, and the electrode reaction inhibition layer is either formed along an interface region between the second electrode and the inter-electrode material layer, or changes an area thereof, or disappears depending on an application condition of the voltage to the first and the second.
申请公布号 KR101165838(B1) 申请公布日期 2012.07.13
申请号 KR20040100851 申请日期 2004.12.03
申请人 发明人
分类号 G11C16/04;H01L27/10;G11C13/02;H01L31/109;H01L45/00 主分类号 G11C16/04
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