发明名称 |
METHOD OF PRODUCING HIGH-PURITY MONOSILANE AND SILICON TETRACHLORIDE |
摘要 |
FIELD: chemistry. ^ SUBSTANCE: invention relates to the technology of inorganic compounds. The method of producing high-purity monosilane and silicon tetrachloride is carried out via two-step disproportioning of chlorosilanes on an anion-exchange resin. The fist step involves disproportionation of trichlorosilane which is first purified from silicon tetrachloride in a first fractionation column to obtain mainly dichlorosilane and silicon tetrachloride. Silicon tetrachloride is output as a commercial product from the bottom of the first fractionation column and dichlorosilane is separated from unreacted trichlorosilane and silicon tetrachloride in a second fractionation column. The second step involves disproportionation of dichlorosilane with separation of monosilane from chlorosilanes in a third fractionation column. Only distillate from the first fractionation column which does not contain silicon tetrachloride is fed into the first reactor. After extraction, the monosiliane is purified from low-boiling impurities in a stripping fractionation column. Purification from compounds whose boiling point is higher than that of monosilane but lower than that of monochlorosilane is carried out in a fifth fractionation column. ^ EFFECT: high degree of conversion of trichlorosilane and obtaining a product with not less than 99,99% content of basic substance. ^ 2 cl, 1 dwg, 2 ex |
申请公布号 |
RU2457178(C1) |
申请公布日期 |
2012.07.27 |
申请号 |
RU20110100357 |
申请日期 |
2011.01.11 |
申请人 |
FGUP "ROSSIJSKIJ NAUCHNYJ TSENTR "PRIKLADNAJA KHIMIJA" |
发明人 |
BARABANOV VALERIJ GEORGIEVICH;TRUKSHIN IGOR' GEORGIEVICH;MUKHORTOV DMITRIJ ANATOL'EVICH;PETROV VALENTIN BORISOVICH;CHURBANOV MIKHAIL FEDOROVICH;GUSEV ANATOLIJ VLADIMIROVICH;KOTENKO ANDREJ VASIL'EVICH;KOTENKO DMITRIJ VASIL'EVICH |
分类号 |
C01B33/04;C01B33/107 |
主分类号 |
C01B33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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