| 摘要 |
PURPOSE: A semiconductor device is provided to reduce a necessary area for forming a diode since the diode is formed after metal lines for transferring the same signal are electrically connected and bound into one set to prevent a PID(Plazma Injection Damage) phenomenon at each set. CONSTITUTION: A plurality of first metal lines(M1_0-M1_5) is formed into a first direction(301). One or more second metal lines(M0_0,M0_1) are formed into a second direction(302). The second metal lines are electrically connected to the first metal lines, transferring the same signal, among a plurality of first metal lines. One or more discharge units discharges electric charges while being connected to one or more second metal lines. The discharge units include diodes(D1_0,D1_1) which are formed on a lower layer than the second metal lines.
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