发明名称 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM AND METHOD FOR MANUFACTURING LSI
摘要 <P>PROBLEM TO BE SOLVED: To provide a pattern forming method and a method for manufacturing a magnetic recording medium capable of shortening the time required for forming a pattern. <P>SOLUTION: A resist is coated on a substrate on which a hard mask is deposited to form a resist pattern and the hard mask is etched using the resist pattern as a mask to form a hard mask pattern. A resist is coated on the hard mask and electron beam lithography is performed to form a second resist pattern. The hard mask is etched using the second resist pattern as a mask to form a second hard mask pattern. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012155015(A) 申请公布日期 2012.08.16
申请号 JP20110012128 申请日期 2011.01.24
申请人 TOSHIBA CORP 发明人 OGASAWARA MUNEHIRO
分类号 G03F7/20;B29C59/02;G11B5/84;H01L21/027 主分类号 G03F7/20
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