| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and the semiconductor device capable of suppressing deposition of a copper compound on an isolated pattern. <P>SOLUTION: In a semiconductor device, alignment marks AM and superposition inspection marks KM, which are formed to respective openings of a low dielectric constant film LOW1 of an element and substrate layer ESL, an ultra low dielectric constant film ELK1 and the like of a fine layer FL, and a low dielectric constant film LOW2 and the like of a semiglobal layer SGL, are electrically connected to a predetermined conductivity type impurity region IR formed on a semiconductor substrate SUB. The alignment marks AM and the superposition inspection marks KM are fixed to the ground potential. <P>COPYRIGHT: (C)2012,JPO&INPIT |
