| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent cracks from occurring in an insulation film under a bonding pad. <P>SOLUTION: A semiconductor device has a bonding pad of a three-layer structure. The bonding pad of the three-layer structure includes a first metal film, a second metal film and a third metal film and the second metal film has a Young's modulus higher than that of each of the first metal film and the third metal film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
