| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state image pickup device which inhibits deterioration in image quality. <P>SOLUTION: A solid state image pickup device comprises: a photodiode 131 including an upper element isolation layer 50A, a lower element isolation impurity layer 51A provided between a rear face and the upper element isolation layer 50A and an impurity layer 21; a floating diffusion 39; and a transistor 132 arranged between the photodiode 131 and the floating diffusion 39. A side face of the lower element isolation impurity layer 51A, which faces the transistor 132 across the impurity layer 21 in a horizontal direction with respect to a surface of a semiconductor substrate 10, protrudes more to the transistor 132 side than a side face of the upper element isolation layer 50A. <P>COPYRIGHT: (C)2012,JPO&INPIT |
