发明名称 |
METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY |
摘要 |
A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where a plurality of shots in the same exposure pass overlap, and where the dose margin from the set of shots is calculated. A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed. |
申请公布号 |
WO2012118616(A2) |
申请公布日期 |
2012.09.07 |
申请号 |
WO2012US25149 |
申请日期 |
2012.02.15 |
申请人 |
D2S, INC.;FUJIMURA, AKIRA;ZABLE, HAROLD ROBERT |
发明人 |
FUJIMURA, AKIRA;ZABLE, HAROLD ROBERT |
分类号 |
H01L21/027;G03F1/36 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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