| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-luminance semiconductor light-emitting element. <P>SOLUTION: A semiconductor light-emitting element comprises: an n-type semiconductor layer including a nitride semiconductor; a p-type semiconductor layer including a nitride semiconductor; and a light-emitting part. The light-emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light-emitting part includes an n-side barrier layer and a first light-emitting layer. The first light-emitting layer includes: a first barrier layer provided between the n-side barrier layer and the p-type semiconductor layer; a first well layer contacting the n-side barrier layer between the n-side barrier layer and the first barrier layer; and a layer-shaped first AlGaN layer that is provided between the first well layer and the first barrier layer and contains Al<SB POS="POST">z1</SB>Ga<SB POS="POST">1-z1</SB>N (0.25<z1≤1). The peak wavelength λp of the light emitted from the light-emitting part is longer than 515 nanometers. <P>COPYRIGHT: (C)2012,JPO&INPIT |
