| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a Schottky barrier semiconductor device which can improve withstand voltage with keeping a reduction of a leakage current IR. <P>SOLUTION: A Schottky barrier semiconductor device comprises embedded semiconductor layers serving as a junction barrier 5 provided outside a guard ring 4 and at a predetermined depth from a surface of a first semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
