| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress current leak in an element isolation region. <P>SOLUTION: In a second region 52 in a polycrystalline silicon film 50 for a resistance element 5, ion implantation with dopant is performed. in a second region 62 in a polycrystalline film 60 for a resistance element 6, the ion implantation with nitrogen or the like is performed. The second regions 52 and 62 have crystal defect density higher than that of first regions 51 and 61. In a polycrystalline film 70 for a resistance element 7, the crystal defect density is high in the vicinity of a silicide film 73. A polycrystalline film 80 for a resistance element 8 contacts a substrate 2 through the silicide film in an opening of an insulation film 3 for element isolation. The crystal defect density on a surface of substrate 2S is higher in the vicinity of the silicide film than in the periphery of the silicide film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
