发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT IN MULTI-CHAMBER SYSTEM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element using a multi-chamber system having etching equipment for semiconductor element manufacturing, which has advantages such as higher wafer transfer speed by disposing multiple process chambers serially in multiple layers. <P>SOLUTION: The method includes: transferring a wafer from a cassette stage to a load lock chamber through a rectangular wafer transfer chamber of atmospheric pressure environment; forming vacuum pressure in the load lock chamber; transferring the wafer from the load lock chamber to the process chamber; and processing the wafer under vacuum in the process chamber. The distance between sidewalls that are farthest from the process chambers disposed apart from each other in a direction parallel to an extension direction of the long side of the cassette stage is less than or equal to the long side of the cassette stage. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012186506(A) |
申请公布日期 |
2012.09.27 |
申请号 |
JP20120137348 |
申请日期 |
2012.06.18 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIN KISO;TEI KEISAN;KWACK GYU-HWAN |
分类号 |
H01L21/302;H01L21/677;B65G1/00;H01L21/00;H01L21/306;H01L21/3065 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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