发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT IN MULTI-CHAMBER SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element using a multi-chamber system having etching equipment for semiconductor element manufacturing, which has advantages such as higher wafer transfer speed by disposing multiple process chambers serially in multiple layers. <P>SOLUTION: The method includes: transferring a wafer from a cassette stage to a load lock chamber through a rectangular wafer transfer chamber of atmospheric pressure environment; forming vacuum pressure in the load lock chamber; transferring the wafer from the load lock chamber to the process chamber; and processing the wafer under vacuum in the process chamber. The distance between sidewalls that are farthest from the process chambers disposed apart from each other in a direction parallel to an extension direction of the long side of the cassette stage is less than or equal to the long side of the cassette stage. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012186506(A) 申请公布日期 2012.09.27
申请号 JP20120137348 申请日期 2012.06.18
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIN KISO;TEI KEISAN;KWACK GYU-HWAN
分类号 H01L21/302;H01L21/677;B65G1/00;H01L21/00;H01L21/306;H01L21/3065 主分类号 H01L21/302
代理机构 代理人
主权项
地址