| 摘要 |
<p>PURPOSE: A semiconductor memory and a formation method thereof are provided to store multi-bits in a single storage by parallely connecting a plurality of magnetic tunnel junctions. CONSTITUTION: A magnetic tunnel junction layer(20) is deposited on a bottom electrode(10). A round spacer is formed on the magnetic tunnel junction layer. A metal layer is uniformly deposited on the round spacer and the magnetic tunnel junction layer. A concentric shape is formed on an upper electrode. The magnetic tunnel junction is etched on the upper electrode using a mask.</p> |
