发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device includes: an active region defined by a device isolation layer on and/or over a substrate; a second conductive well on and/or over the active region; an extended drain formed at one side of the second conductive well; a gate electrode on and/or over the second conductive well and the extended drain; and a source and a drain formed at both sides of the gate electrode, in which extended regions are formed at the corners of the second conductive well under the gate electrode. |
申请公布号 |
US8288830(B2) |
申请公布日期 |
2012.10.16 |
申请号 |
US20090648230 |
申请日期 |
2009.12.28 |
申请人 |
KIM JONG-MIN;YOO JAE-HYUN;PARK CHAN-HO;DONGBU HITEK CO., LTD. |
发明人 |
KIM JONG-MIN;YOO JAE-HYUN;PARK CHAN-HO |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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