| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lifetime value measuring method which is capable of simply estimating a lifetime value after electron beam irradiation, thereby greatly shortening a time for measurement and improving productivity in the production of a device. <P>SOLUTION: The lifetime value measuring method, which inspects the lifetime value of a wafer after the electron beam irradiation, comprises calculation of carrier concentration before the electron beam irradiation, calculation of level density before the electron beam irradiation, calculation of the carrier concentration after the electron beam irradiation, calculation of a difference in carrier concentration, calculation of a difference in level density, and calculation of the lifetime value. <P>COPYRIGHT: (C)2013,JPO&INPIT |
