发明名称 |
NITRIDE SEMICONDUCTOR LASER AND EPITAXIAL SUBSTRATE |
摘要 |
A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.
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申请公布号 |
US2012269222(A1) |
申请公布日期 |
2012.10.25 |
申请号 |
US201213366636 |
申请日期 |
2012.02.06 |
申请人 |
KYONO TAKASHI;ENYA YOHEI;SUMITOMO TAKAMICHI;YOSHIZUMI YUSUKE;UENO MASAKI;YANASHIMA KATSUNORI;TASAI KUNIHIKO;NAKAJIMA HIROSHI;SONY CORPORATION;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KYONO TAKASHI;ENYA YOHEI;SUMITOMO TAKAMICHI;YOSHIZUMI YUSUKE;UENO MASAKI;YANASHIMA KATSUNORI;TASAI KUNIHIKO;NAKAJIMA HIROSHI |
分类号 |
H01S5/343 |
主分类号 |
H01S5/343 |
代理机构 |
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