发明名称 |
MULTIPLE LEVEL PROGRAM VERIFY IN A MEMORY DEVICE |
摘要 |
A series of programming pulses are applied to a memory cell to be programmed. A program verify pulse, at an initial program verify voltage, is applied to the memory cell after each programming pulse. The initial program verify voltage is a verify voltage that has been increased by a quick charge loss voltage. The quick charge loss voltage is subtracted from the initial program verify voltage after either a programming pulse has reached a certain reference voltage or a quantity of programming pulses has reached a pulse count threshold.
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申请公布号 |
US2012269004(A1) |
申请公布日期 |
2012.10.25 |
申请号 |
US201213537150 |
申请日期 |
2012.06.29 |
申请人 |
KIM TAEHOON;HE DEPING;KESSENICH JEFFREY ALAN;MICRON TECHNOLOGY, INC. |
发明人 |
KIM TAEHOON;HE DEPING;KESSENICH JEFFREY ALAN |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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