| 摘要 |
PURPOSE: A thin film transistor array substrate and a manufacturing method thereof are provided to reduce the number of a mask process by forming a source/drain electrode and a channel layer by using a separated mask process. CONSTITUTION: A gate line(101) and a data line(103) are sequentially arranged. A gate pad(110) and a data pad(104) are extended from the gate line and the data line in a non-display area of a substrate(100). A source and a drain electrode(117,118) of a thin film transistor are formed as a dual metal film pattern. A data pad and the data line are exposed to the outside. |
