Monolithic high-current and low-current transistors sharing high voltage drain

摘要

A planar, monolithic, high-voltage (HV), integrated circuit (IC) includes power field-effect-transistors (FETs) and/or bipolar power-transistors having an HV diffusion connection. The HV IC further includes several types of HV, low-current (LC) FETs including depletion and/or enhancement mode transistors and/or HV-LC bipolar transistors. The HV-LC transistors are integrated into the HV-high-current (HC) or power transistor structure in various combinations by sharing their HV diffusion connections, which enables increased design versatility while minimizing die area. Isolation and buried diffusion structures provide higher operating voltage and/or enhanced depletion FET shut-off. HV-LC IGFET body and/or bipolar transistor base regions are either isolated from or connected to the grounded isolation diffusion further enhancing design versatility.