发明名称 |
Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the method |
摘要 |
A method is provided to fabricate a semiconductor device, where the method includes providing a substrate comprised of crystalline silicon; implanting a ground plane in the crystalline silicon so as to be adjacent to a surface of the substrate, the ground plane being implanted to exhibit a desired super-steep retrograde well (SSRW) implant doping profile; annealing implant damage using a substantially diffusionless thermal annealing to maintain the desired super-steep retrograde well implant doping profile in the crystalline silicon and, prior to performing a shallow trench isolation process, depositing a silicon cap layer over the surface of the substrate. The substrate may be a bulk Si substrate or a Si-on-insulator substrate. The method accommodates the use of an oxynitride gate stack structure or a high dielectric constant oxide/metal (high-K/metal) gate stack structure. The various thermal processes used during fabrication are selected/controlled so as to maintain the desired super-steep retrograde well implant doping profile in the crystalline silicon. |
申请公布号 |
US8329564(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US20070925069 |
申请日期 |
2007.10.26 |
申请人 |
CAI JIN;MAJUMDAR AMLAN;NING TAK H.;REN ZHIBIN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CAI JIN;MAJUMDAR AMLAN;NING TAK H.;REN ZHIBIN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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