发明名称 |
Ge-RICH GST-212 PHASE CHANGE MEMORY MATERIALS |
摘要 |
A phase change material comprises GexSbyTez, wherein a Ge atomic concentration x is within a range from 30% to 65%, a Sb atomic concentration y is within a range from 13% to 27% and a Te atomic concentration z is within a range from 20% to 45%. A Ge-rich family of such materials is also described. A memory device, suitable for integrated circuits, comprising such materials is described.
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申请公布号 |
US2012326111(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201113327595 |
申请日期 |
2011.12.15 |
申请人 |
CHENG HUAI-YU;LUNG HSIANG-LAN;SHIH YEN-HAO;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHENG HUAI-YU;LUNG HSIANG-LAN;SHIH YEN-HAO |
分类号 |
H01L45/00;C09K3/00;H01L21/06 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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