| 发明名称 |
Semiconductor Device and A Method of Manufacturing the Same |
| 摘要 |
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
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| 申请公布号 |
US2013005094(A1) |
申请公布日期 |
2013.01.03 |
| 申请号 |
US201213608507 |
申请日期 |
2012.09.10 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;KADONO MASAYA;YAMAZAKI SHUNPEI;YAMAUCHI YUKIO;KITAKADO HIDEHITO |
发明人 |
KADONO MASAYA;YAMAZAKI SHUNPEI;YAMAUCHI YUKIO;KITAKADO HIDEHITO |
| 分类号 |
H01L21/322;H01L21/336 |
主分类号 |
H01L21/322 |
| 代理机构 |
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代理人 |
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