Various embodiments include a memory device and methods of forming the same. The memory device can include an electrode coupled to one or more memory elements, to store information. The electrode may comprise a number of metals, where a first one of the metals has a Gibbs free energy for oxide formation lower than the Gibbs free energy of oxidation of a second one of the metals.
申请公布号
WO2013006376(A2)
申请公布日期
2013.01.10
申请号
WO2012US44653
申请日期
2012.06.28
申请人
MICRON TECHNOLOGY, INC.;SANDHU, GURTEJ, S.;MARSH, EUGENE, P.