METHOD OF EVALUATING QUALITY OF WAFER OR SINGLE CRYSTAL INGOT AND METHOD OF CONTROLLING QUALITY OF SINGLE CRYSTAL INGOT BY USING THE SAME
摘要
Provided is a method of evaluating quality of a wafer or a single crystal ingot and a method of controlling quality of a single crystal ingot by using the same. The method of evaluating quality of a wafer or a single crystal ingot according to an embodiment may include performing Cu (copper) haze evaluation on a wafer or a slice of a single crystal ingot and Cu haze scoring with respect to the result of the Cu haze evaluation.
申请公布号
WO2013005975(A2)
申请公布日期
2013.01.10
申请号
WO2012KR05286
申请日期
2012.07.03
申请人
LG SILTRON INC.;JANG, YUN-SEON;HONG, YOUNG-HO;JUNG, YO-HAN;KIM, SE-HUN