发明名称 |
THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THEREOF, AND DISPLAY APPARATUS |
摘要 |
<p>The purpose of the present invention is to provide a thin-film transistor which can have both an excellent ON characteristic and an excellent OFF characteristic, and electric characteristics of which will be symmetrical even when exchanging the source electrode and drain electrode thereof. The thin-film transistor is provided with: a substrate (100); a gate electrode (110); a gate insulation layer (120); a crystalline silicon layer (131) formed on the gate insulation layer (120) that is above the gate electrode (110); an amorphous silicon layer (131) that is formed on the gate insulation layer (120) at both sides of the crystalline silicon layer (131), and the film thickness of which is smaller than the film thickness of the crystalline silicon layer (131); a channel protection layer (140) that is formed on the crystalline silicon layer (131); and a source electrode (171) and a drain electrode (172).</p> |
申请公布号 |
WO2013005250(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
WO2011JP03845 |
申请日期 |
2011.07.05 |
申请人 |
PANASONIC CORPORATION;PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.;HAYASHI, HIROSHI;KAWASHIMA, TAKAHIRO;KAWACHI, GENSHIROU |
发明人 |
HAYASHI, HIROSHI;KAWASHIMA, TAKAHIRO;KAWACHI, GENSHIROU |
分类号 |
H01L21/336;H01L21/20;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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