发明名称 METHOD FOR OBTAINING A LONG-TERM SHORT-CIRCUIT IN A POWER ELECTRONICS MODULE
摘要 <p>A method for simplifying short circuit failure mode (SCFM) transitions in a power electronics module. The method includes keeping at least one switch (101, 102, 103, 104) in closed position by means of a signal (109) supplied by a gate unit (110). Upon a failure of a first semiconductor chip (105) during which the failed chip enters an SCFM, the switch (102, 103, 104) is opened, wherein the gates of the second semiconductor chips (106, 107, 108) become floating. Thereby the blocking voltage of the semiconductor chips is reduced.</p>
申请公布号 WO2013004289(A1) 申请公布日期 2013.01.10
申请号 WO2011EP61215 申请日期 2011.07.04
申请人 ABB TECHNOLOGY AG;HAEFNER, JUERGEN;COTTET, DIDIER;NISTOR, IULIAN;STORASTA, LIUTAURAS;RAHIMO, MUNAF;SCHULZ, NICOLA;STRASSEL, THORSTEN;SCHNELL, RAFFAEL 发明人 HAEFNER, JUERGEN;COTTET, DIDIER;NISTOR, IULIAN;STORASTA, LIUTAURAS;RAHIMO, MUNAF;SCHULZ, NICOLA;STRASSEL, THORSTEN;SCHNELL, RAFFAEL
分类号 H02H7/12;H02M7/5387;H03K17/08 主分类号 H02H7/12
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