发明名称 APPARATUS FOR ATOMIC LAYER DEPOSITION
摘要 PURPOSE: An atomic layer deposition device is provided to improve deposition speed and membrane quality by increasing the speed of a purge process with enhanced structure of a purge gas injection nozzle. CONSTITUTION: An atomic layer deposition device comprises a reaction chamber, a substrate support, and a shower head. At least one of the substrate support and the shower head is installed to move in a first direction. Each nozzle set comprises a first nozzle set(111) for depositing first source gas and a second nozzle set(112) for depositing second source gas. The first nozzle set comprises a first source gas injection nozzle(211), a purge gas injection nozzle(301), and a purge gas outlet(311). The second nozzle set comprises a second source gas injection nozzle(221), the purge gas injection nozzle, and the purge gas outlet.
申请公布号 KR20130007192(A) 申请公布日期 2013.01.18
申请号 KR20110064229 申请日期 2011.06.30
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 KIM, SEUNG HUN;SEO, SANG JOON;KIM, JIN KWANG;CHEON, JUN HYUK
分类号 C23C16/455;H01L21/20;H01L51/56;H05B33/04 主分类号 C23C16/455
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