发明名称 |
APPARATUS FOR ATOMIC LAYER DEPOSITION |
摘要 |
PURPOSE: An atomic layer deposition device is provided to improve deposition speed and membrane quality by increasing the speed of a purge process with enhanced structure of a purge gas injection nozzle. CONSTITUTION: An atomic layer deposition device comprises a reaction chamber, a substrate support, and a shower head. At least one of the substrate support and the shower head is installed to move in a first direction. Each nozzle set comprises a first nozzle set(111) for depositing first source gas and a second nozzle set(112) for depositing second source gas. The first nozzle set comprises a first source gas injection nozzle(211), a purge gas injection nozzle(301), and a purge gas outlet(311). The second nozzle set comprises a second source gas injection nozzle(221), the purge gas injection nozzle, and the purge gas outlet.
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申请公布号 |
KR20130007192(A) |
申请公布日期 |
2013.01.18 |
申请号 |
KR20110064229 |
申请日期 |
2011.06.30 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
KIM, SEUNG HUN;SEO, SANG JOON;KIM, JIN KWANG;CHEON, JUN HYUK |
分类号 |
C23C16/455;H01L21/20;H01L51/56;H05B33/04 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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