| 发明名称 |
Bipolar transistor with guard region |
| 摘要 |
A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.
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| 申请公布号 |
US8357985(B2) |
申请公布日期 |
2013.01.22 |
| 申请号 |
US201213350582 |
申请日期 |
2012.01.13 |
| 申请人 |
ANALOG DEVICES, INC.;LANE WILLIAM ALLAN;BAIN ANDREW DAVID;BOWERS DEREK FREDERICK;DALY PAUL MALACHY;DEIGNAN ANNE MARIA;DUNBAR MICHAEL THOMAS;MCGUINNESS PATRICK MARTIN;STENSON BERNARD PATRICK |
发明人 |
LANE WILLIAM ALLAN;BAIN ANDREW DAVID;BOWERS DEREK FREDERICK;DALY PAUL MALACHY;DEIGNAN ANNE MARIA;DUNBAR MICHAEL THOMAS;MCGUINNESS PATRICK MARTIN;STENSON BERNARD PATRICK |
| 分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
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