Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device

摘要

An electrical device on a single semiconductor substrate includes: an open base vertical PNP transistor placed in parallel with a wide bandgap, high voltage diode wherein the PNP transistor has a P doped collector region, an N-doped base layer, an N doped buffer layer, and a P doped emitter layer.