发明名称 Integrated circuit system employing low-k dielectrics and method of manufacture thereof
摘要 A method of manufacture of an integrated circuit system includes: fabricating a substrate having an integrated circuit; applying a low-K dielectric layer over the integrated circuit; forming a via and a trench, in the low-K dielectric layer, over the integrated circuit; forming a structure surface by a chemical-mechanical planarization (CMP) process; and applying a direct implant to the structure surface for forming an implant layer and a metal passivation layer including repairing damage, to the low-K dielectric layer, caused by the CMP process.
申请公布号 US8358007(B2) 申请公布日期 2013.01.22
申请号 US20100796610 申请日期 2010.06.08
申请人 GLOBALFOUNDRIES SINGAPORE PTE. LTD.;SOHN DONG KYUN;LIU WUPING;ZHANG FAN;TAN JUAN BOON;LI JING HUI;ZHANG BEI CHAO;DU LUYING;LIU WEI;LIM YEOW KHENG 发明人 SOHN DONG KYUN;LIU WUPING;ZHANG FAN;TAN JUAN BOON;LI JING HUI;ZHANG BEI CHAO;DU LUYING;LIU WEI;LIM YEOW KHENG
分类号 H01L23/48;H01L21/768 主分类号 H01L23/48
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