发明名称 |
Integrated circuit system employing low-k dielectrics and method of manufacture thereof |
摘要 |
A method of manufacture of an integrated circuit system includes: fabricating a substrate having an integrated circuit; applying a low-K dielectric layer over the integrated circuit; forming a via and a trench, in the low-K dielectric layer, over the integrated circuit; forming a structure surface by a chemical-mechanical planarization (CMP) process; and applying a direct implant to the structure surface for forming an implant layer and a metal passivation layer including repairing damage, to the low-K dielectric layer, caused by the CMP process.
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申请公布号 |
US8358007(B2) |
申请公布日期 |
2013.01.22 |
申请号 |
US20100796610 |
申请日期 |
2010.06.08 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD.;SOHN DONG KYUN;LIU WUPING;ZHANG FAN;TAN JUAN BOON;LI JING HUI;ZHANG BEI CHAO;DU LUYING;LIU WEI;LIM YEOW KHENG |
发明人 |
SOHN DONG KYUN;LIU WUPING;ZHANG FAN;TAN JUAN BOON;LI JING HUI;ZHANG BEI CHAO;DU LUYING;LIU WEI;LIM YEOW KHENG |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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