发明名称 |
Trench gate MOSFET and method of manufacturing the same |
摘要 |
A Trench gate MOS field-effect transistor having a narrow, lightly doped, region extending from a channel accommodating region (3) of same conductivity type immediately adjacent the trench sidewall. The narrow region may be self-aligned to the top of a lower polysilicon shield region in the trench or may extend the complete depth of the trench. The narrow region advantageously relaxes the manufacturing tolerances, which otherwise require close alignment of the upper polysilicon trench gate to the body-drain junction.
|
申请公布号 |
US8357971(B2) |
申请公布日期 |
2013.01.22 |
申请号 |
US20080739341 |
申请日期 |
2008.10.22 |
申请人 |
NXP B.V.;PEAKE STEVEN THOMAS;RUTTER PHILIP;ROGERS CHRISTOPHER MARTIN;DROBNIS MIRON;BUTLER ANDREW |
发明人 |
PEAKE STEVEN THOMAS;RUTTER PHILIP;ROGERS CHRISTOPHER MARTIN;DROBNIS MIRON;BUTLER ANDREW |
分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|