Semiconductor device having multiple storage regions

摘要

One embodiment in accordance with the invention can include a semiconductor device that includes: a groove that is formed in a semiconductor substrate; bottom oxide films that are formed on both side faces of the groove; two charge storage layers that are formed on side faces of the bottom oxide films; top oxide films that are formed on side faces of the two charge storage layers; and a silicon oxide layer that is formed on the bottom face of the groove, and has a smaller film thickness than the top oxide films.