| 摘要 |
A method for production of a matrix of thermo-resistive converters includes formation of dielectric film through application of a layer of silicon dioxide, after that layer of silicon nitride, and thermo-sensitive metal layer and its pattern, anisotropic etching of silicon sub-layer, with formation of pattern of matrix of micro-bridges, formation of windows round the matrix of micro-bridges with etching and with local formation of a layer of silicon oxide. |
