发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a high degree of freedom in arranging an external electrode in a semiconductor device called as a wafer level chip size package (CSP) having a stress relaxing function and to provide a manufacturing method of the same. <P>SOLUTION: The semiconductor device 1 comprises: an insulating resin layer 20; a re-wiring layer 13; an insulating re-wiring protective layer 21; a conductive post 18; and an external electrode 17. The insulating resin layer 20 includes: a first opening part 31 which opens in a lamination direction Y and opens on a first electrode 30; and a planer surface 51 in the peripheral of the opening of the first opening part 31. The re-wiring layer 13 includes a first connecting part 13c and a second connecting part 36 extending on the planer surface 51. One end part of the conductive post 18 is electrically connected to the first electrode 30 and the other end part of the conductive post 18 is electrically connected to the first connecting part 13c. An inner diameter D2 of a second opening part 32 is larger than an inner diameter D1 of the first opening part 31. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013026405(A) 申请公布日期 2013.02.04
申请号 JP20110159183 申请日期 2011.07.20
申请人 HITACHI CHEM CO LTD 发明人
分类号 H01L23/12 主分类号 H01L23/12
代理机构 代理人
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