| 发明名称 |
Low-K Dielectric Layer and Porogen |
| 摘要 |
A system and method for a low-k dielectric layer are provided. A preferred embodiment comprises forming a matrix and forming a porogen within the matrix. The porogen comprises an organic ring structure with fewer than fifteen carbons and a large percentage of single bonds. Additionally, the porogen may have a viscosity greater than 1.3 and a Reynolds numbers less than 0.5.
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| 申请公布号 |
US2013032955(A1) |
申请公布日期 |
2013.02.07 |
| 申请号 |
US201113204507 |
申请日期 |
2011.08.05 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;LIOU JOUNG-WEI;YANG HUI-CHUN;PENG YU-YUN;LIN KENG-CHU |
发明人 |
LIOU JOUNG-WEI;YANG HUI-CHUN;PENG YU-YUN;LIN KENG-CHU |
| 分类号 |
H01L21/31;H01L21/28;H01L23/29 |
主分类号 |
H01L21/31 |
| 代理机构 |
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