| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a carbon-doped silicon single crystal, with which the yield can be improved by effectively suppressing dislocation in pulling up of the carbon-doped silicon single crystal. <P>SOLUTION: In the method for producing a carbon-doped silicon single crystal, in which a silicon single crystal is pulled up from silicon melt with carbon added thereto, when an average value of a crystal temperature gradient in the pulling-up axis direction in a temperature range from the melting point of silicon to 1,400°C is represented by G [°C/mm] during pulling-up of the silicon single crystal, the silicon single crystal is pulled upward while keeping the G value at 1.0-3.5 [°C/mm] at least till a solidification ratio reaches 20%, and an Srcs value (the quotient of the von Mises equivalent stress [Pa] divided by CRSS (Critical Resolved Shear Stress) [Pa] at a crystal temperature of 1,400°C) at a center section in a solid-liquid interface in the radial direction during growth of the silicon single crystal at 0.9 or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
