| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to easily remove etching residue to by using a SPM(sulfuric acid and hydrogen peroxide mixture) and DHF(diluted hydrogen fluoride). CONSTITUTION: A high-k dielectric material film(210) is formed on a substrate(100). The high-k dielectric material film includes hafnium oxide and lanthanum oxide. The high-k dielectric material film is etched. The etching residue due to etching is cleaned with a mixture of SPM and HF.</p> |
