| 摘要 |
Disclosed are a manufacturing method for a light-emitting diode having a heat treatment film on the upper surface of a light-emitting structure and having an improved internal light efficiency as a result of heat treatment, and a light-emitting diode manufactured using the method. Compression stress is applied to the uppermost layer of the light-emitting structure from the heat treatment film when thermal energy is applied. Thermal expansion of a second conductive semiconductor layer in the light-emitting structure is suppressed due to the compression stress, and crystal defects are repaired by the applied thermal energy. Thus, crystal defects of the second conductive semiconductor layer are repaired and the activation ratio of dopant is raised. |
