| 摘要 |
PURPOSE: An apparatus for polishing a wafer is provided to reduce defects by controlling polishing pressure and rotating speed. CONSTITUTION: A wafer is polished with a first pressure and a first rotation speed(S100). The wafer is polished with a second pressure and a second rotation speed(S200). The wafer is polished with a third pressure and a third rotation speed(S300). [Reference numerals] (S100) First process for polishing a wafer with a first polishing pressure in a first rotation speed; (S200) Second process for polishing the wafer with a second polishing pressure in a second rotation speed; (S300) Third process for polishing the wafer with a third polishing pressure in a third rotation speed |
