SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

PURPOSE: A semiconductor memory device and an operating method thereof are provided to improve a program disturbance property by uniformly generating a channel boosting in a channel region of a program prohibition cell. CONSTITUTION: A memory block(110MB) includes memory cells connected to word lines classified into a plurality word line groups between a drain selection line and a source selection line. An operation circuit(130-170) precharges a channel region of a program prohibition cell determined by input data and performs a program operation to store data in the memory cells of the selected word line. A control circuit(120) controls the operation circuit to change the precharge level of the channel region of the program prohibition cell according to the location of the word line group. [Reference numerals] (110MB) Memory block; (120) Control circuit; (130) Voltage generating circuit; (140) Low decoder; (160) Row selection circuit; (170) Input and output circuit