| 摘要 |
PURPOSE: A vertical light emitting diode device of a current stop layer structure and a manufacturing method thereof are provided to improve the productivity of the light emitting diode device and simplify a production process by forming a current stop layer without an additional photolithography process. CONSTITUTION: An n type nitride gallium layer(102) is formed on the lower side of an n type electrode(101). An active layer(103) is formed on the lower side of the n type nitride gallium layer. A p type nitride gallium layer(104) is formed on the lower side of the active layer. A current stop layer(104b) vertically corresponds to an n type electrode region in the p type nitride gallium layer. A metal layer(106) is formed on the lower side of the current stop layer and the lower side of a p type electrode(105). |
