发明名称 |
Methods of forming oxide-filled trenches in substrates using multiple-temperature oxide deposition techniques |
摘要 |
Methods of forming integrated circuit substrates include forming first and second trenches having unequal widths in a semiconductor substrate and then depositing a first oxide layer at a first temperature into the first and second trenches. The first oxide layer has a thickness sufficient to completely fill the first trench but only partially fill the second trench, which is wider than the first trench. A step is also performed to selectively remove a portion of the first oxide layer from a bottom of the second trench. A second oxide layer is then deposited at a second temperature onto the bottom of the second trench. The second temperature is greater than the first temperature. For example, the first temperature may be in a range from about 300° C. to about 460° C. and the second temperature may be in a range from about 500° C. to about 600° C. |
申请公布号 |
US8399363(B1) |
申请公布日期 |
2013.03.19 |
申请号 |
US201113036818 |
申请日期 |
2011.02.28 |
申请人 |
LEE JUNG-CHAN;LEE SEUNG-JAE;HONG JIN-GI;KO YOUNG-MIN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNG-CHAN;LEE SEUNG-JAE;HONG JIN-GI;KO YOUNG-MIN |
分类号 |
H01L21/31;H01L21/469;H01L21/76 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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