发明名称 |
Establishing a hydrophobic surface of sensitive low-k dielectrics of microstructure devices by in situ plasma treatment |
摘要 |
Silicon oxide based low-k dielectric materials may receive superior hydrophobic surface characteristics on the basis of a plasma treatment using hydrogen and carbon containing radicals. For this purpose, the surface of the low-k dielectric material may be exposed to these radicals, at least in one in situ process in combination with another reactive plasma ambient, for instance used for patterning the low-k dielectric material. Consequently, superior surface characteristics may be established or re-established without significantly contributing to product cycle time. |
申请公布号 |
US8399358(B2) |
申请公布日期 |
2013.03.19 |
申请号 |
US20100786829 |
申请日期 |
2010.05.25 |
申请人 |
FISCHER DANIEL;SCHALLER MATTHIAS;GLOBALFOUNDRIES, INC. |
发明人 |
FISCHER DANIEL;SCHALLER MATTHIAS |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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