发明名称 |
Method for manufacturing SOI substrate and method for manufacturing semiconductor device |
摘要 |
A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the flattened separation layer; a damaged area is formed by introducing hydrogen or the like into a semiconductor substrate; an insulating film is formed over the semiconductor substrate in which the damaged area is formed; the insulating film formed over the insulating substrate is bonded to the insulating film formed over the semiconductor substrate, the semiconductor substrate is separated at the damaged area so that a semiconductor layer is formed over the insulating substrate; the semiconductor layer is flattened so as to form an SOI substrate; and the semiconductor device is formed over the SOI substrate. |
申请公布号 |
US8399337(B2) |
申请公布日期 |
2013.03.19 |
申请号 |
US201113045810 |
申请日期 |
2011.03.11 |
申请人 |
AKIMOTO KENGO;ENDO YUTA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
AKIMOTO KENGO;ENDO YUTA |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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