FERROELECTRIC CAPACITOR FOR FLEXIBLE NONVOLATILE MEMORY DEVICE, FLEXIBLE NONVOLATILE FERROELECTRIC MEMORY DEVICE, AND MANUFACTURING METHOD FOR THE SAME

摘要

PURPOSE: A ferroelectric capacitor for a flexible nonvolatile memory device, a flexible nonvolatile ferroelectric memory device, and a method for manufacturing the same are provided to easily process a device. CONSTITUTION: A semiconducting channel layer(510) is formed on a flexible substrate(500). A source and a drain region(520,530) are formed at both sides of the semiconductor channel layer. A polymer bonding layer is formed on the semiconductor channel layer. A gate electrode(590) is formed on a ferroelectric layer(550). The source and the drain electrode(570,580) are formed on the source and the drain region.