发明名称 GRAPHENE DEFECT ALTERATION
摘要 <p>Technologies are generally described for a method and system configured effective to alter a defect area in a layer on a substrate including graphene. An example method may include receiving and heating the layer to produce a heated layer and exposing the heated layer to a first gas to produce a first exposed layer, where the first gas may include an amine. The method may further include exposing the first exposed layer to a first inert gas to produce a second exposed layer and exposing the second exposed layer to a second gas to produce a third exposed layer where the second gas may include an alane or a borane. Exposure of the second exposed layer to the second gas may at least partially alter the defect area.</p>
申请公布号 KR20130039315(A) 申请公布日期 2013.04.19
申请号 KR20127013781 申请日期 2011.09.16
申请人 EMPIRE TECHNOLOGY DEVELOPMENT LLC 发明人 MILLER SETH ADRIAN
分类号 C01B31/02;H01L21/02 主分类号 C01B31/02
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