PURPOSE: A method for storing data in a nonvolatile memory device is provided to reduce an error correction code overhead by reducing a bit error rate which gradually increases to an upper page. CONSTITUTION: A plurality of n-bit multilevel cells are provided(S100). Each n-bit multilevel cell is programmed to n-bit data according to a preset bit ordering(S110). The bit ordering allocates 0 to the erase states of the n-bit multilevel cells. The bit ordering equalizes each bit read number of first to n-th pages including the least significant bit and the most significant bit of the n-bit data when the n-bit data stored in the n-bit multilevel cells is read. [Reference numerals] (AA) Start; (BB) End; (S100) Providing a plurality of n-bit multilevel cells; (S110) Programming each n-bit multilevel cell to n-bit data according to a preset bit ordering which allocates at least one bit "0" to the erase states of the n-bit multilevel cells;
