| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can furthermore reduce a change of a resistance value dependent on bias. <P>SOLUTION: A semiconductor device comprises: an N-type silicon layer 3; P-type diffusion resistance 7 formed on the N-type silicon layer 3; a silicon oxide film 11 formed on the P-type diffusion resistance 7; a high-voltage electrode 15 penetrating the silicon oxide film 11 to be connected to one end 7a of the P-type diffusion resistance 7 for applying a high voltage to the one end 7a; and a low-voltage electrode 17 penetrating the silicon oxide film 11 to be connected to the other end 7b of the P-type diffusion resistance 7 for applying a low voltage to the other end 7b. The high-voltage electrode 15 and the low-voltage electrode 17 extend on the silicon oxide film 11 and a slit 21 is provide on the silicon oxide film 11 between the high-voltage electrode 15 and the low-voltage electrode 17. The slit 21 is positioned on a side closer to the one end 7a than an intermediate position 23 between the one end 7a and the other end 7b of the P-type diffusion resistance 7. <P>COPYRIGHT: (C)2013,JPO&INPIT |
