发明名称 |
Solid-state imaging device with channel stop region with multiple impurity regions in depth direction |
摘要 |
Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk) so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.
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申请公布号 |
US8431976(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US201213348733 |
申请日期 |
2012.01.12 |
申请人 |
HIRATA KIYOSHI;SONY CORPORATION |
发明人 |
HIRATA KIYOSHI |
分类号 |
H01L27/148;H01L31/062;H01L27/146;H01L29/768 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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